Martin Hundhausen
Martin Hundhausen
Publikationen
2024 2022 Koch S. , Holzheu S. , Hundhausen M. Windenergieanlagen und Infraschall: Keine Evidenz für gesundheitliche Beeinträchtigungen – eine physikalische, medizinische und gesellschaftliche Einordnung Deutsche Medizinische Wochenschrift 147 2022 ), S. 112-118 ISSN: 0012-0472 10.1055/a-1685-5436 Koch S. , Holzheu S. , Hundhausen M. Wind Energy Turbines and Sound Exposure in the audible and IFLN Range: High Evidence for severe Health Disturbances according to current Studies Reply Deutsche Medizinische Wochenschrift 147 2022 ), S. 1224-1227 ISSN: 0012-0472 10.1055/a-1788-1091 Swen M. , Stefan H. , Hundhausen M. Susanne K. :Can infrasound from wind turbines affect myocardial contractility? A critical review Noise & Health 24 2022 ), S. 96-106 ISSN: 1463-1741 10.4103/nah.nah_28_22 2019 Kozak M. Higuchi T. McNeur J. Shiloh R. Heide C. Paschen T. Yousefi P. Sturm C. , Li A. Illmer J. Meier S. Schönenberger N. Dienstbier P. Tafel A. Weber P. Zimmermann R. Seidling M. Mittelbach A. Heimerl J. Eckstein T. Hundhausen M. Ristein J. Hommelhoff P. From strong-field physics in and at nanoscale matter to photonics-based laser accelerators XXI International Conference on Ultrafast Phenomena 2018 (UP 2018) In: 205 2019 10.1051/epjconf/201920508009 https://www.epj-conferences.org/articles/epjconf/abs/2019/10/epjconf_up2019_08009/epjconf_up2019_08009.html 2017 2014 2013 2012 2011 2010 Röhrl J. , Hundhausen M. Speck F. , Seyller T. :Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy Materials Science Forum 645-648 2010 ), S. 603 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.645-648.603 Speck F. , Ostler M. , Röhrl J. , Emtsev K. , Hundhausen M. Ley L. Seyller T. :Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM Physica Status Solidi (C) Current Topics in Solid State Physics 7 2010 ), S. 398 ISSN: 1862-6351 10.1002/pssc.200982496 Speck F. , Ostler M. , Röhrl J. , Jobst J. , Waldmann D. , Hundhausen M. Ley L. Weber HB. , Seyller T. :Quasi-freestanding Graphene on SiC(0001) Materials Science Forum 645-648 2010 ), S. 629-632 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.645-648.629 2009 2008 Hundhausen M. Püsche R. , Röhrl J. , Ley L. Characterization of defects in silicon carbide by Raman spectroscopy physica status solidi (b) 254 2008 ), S. 1356 ISSN: 0370-1972 10.1002/pssb.200844052 Röhrl J. , Hundhausen M. Emtsev K. , Seyller T. , Graupner R. , Ley L. Raman spectra of epitaxial graphene on SiC(0001) Applied Physics Letters 92 2008 ), S. 201918 ISSN: 0003-6951 10.1063/1.2929746 Röhrl J. , Hundhausen M. Emtsev K. , Seyller T. , Ley L. Graphene layers on silicon carbide studied by Raman spectroscopy Materials Science Forum 600-603 2008 ), S. 567 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.600-603.567 Syrgiannis Z. , Hauke F. , Röhrl J. , Hundhausen M. Graupner R. , Elemes Y. , Hirsch A. :Covalent sidewall functionalization of SWNTs by nucleophilic addition of lithium amides European Journal of Organic Chemistry 2008 ), S. 2544-2550 ISSN: 1434-193X 10.1002/ejoc.200800005 2007 2006 Graupner R. , Abraham J. , Wunderlich D. , Vencelová A. , Lauffer P. , Röhrl J. , Hundhausen M. Ley L. Hirsch A. :Nucleophilic-alkylation-reoxidation: A functionalization sequence for single-wall carbon nanotubes Journal of the American Chemical Society 128 2006 ), S. 6683-6689 ISSN: 0002-7863 10.1021/ja0607281 Püsche R. , Hundhausen M. Ley L. Semmelroth K. , Pensl G. , Desperrier P. , Wellmann P. , Haller EE. , Ager J. , Starke U. :Electronic Raman Studies of Shallow Donors in Silicon Carbide Materials Science Forum 527-529 2006 ), S. 579 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.527-529.579 2005 Wellmann P. , Herro ZG. , Winnacker A. , Püsche R. , Hundhausen M. Masri P. , Kulik A. , Bogdanov M. , Karpov S. , Ramm M. , Makarov Y. :In situ visualization of SiC physical vapor transport crystal growth Journal of Crystal Growth 275 2005 ), S. e1807–e1812 ISSN: 0022-0248 10.1016/j.jcrysgro.2004.11.253 2004 Püsche Roland, Hundhausen Martin, Ley Lothar, Semmelroth Kurt, Schmid Frank, Pensl Gerhard, Nagasawa H.:Characterization of cubic bulk SiC and temperature induced polytype conversion in cubic CVD SiC studied by Raman spectroscopy Journal of Applied Physics 96 2004 ), S. 5569 ISSN: 1089-7550 Püsche R., Hundhausen Martin, Ley Lothar, Semmelroth Kurt, Schmid Frank, Pensl Gerhard, Nagasawa H.:Study of the temperature induced polytype conversion in cubic SiC by Raman spectroscopy Materials Science Forum 457-460 2004 ), S. 617 ISSN: 0255-5476 Püsche R., Hundhausen Martin, Ley Lothar, Semmelroth K., Schmid F., Pensl Gerhard:Temperature induced polytype conversion in cubic silicon carbide studied by Raman spectroscopy Journal of Applied Physics 96 2004 ), S. 5569 ISSN: 0021-8979 10.1063/1.1803924 Semmelroth Kurt, Krieger Michael, Pensl Gerhard, Nagasawa H., Püsche R., Hundhausen Martin, Ley Lothar, Nerding M., Strunk H. P.:Growth of 3C-SiC Bulk Material by the Modified Lely-Method Materials Science Forum 457-460 2004 ), S. 151 ISSN: 0255-5476 2003 Wellmann P.J., Herro Z, Selder M., Durst Franz, Püsche R., Hundhausen Martin, Ley Lothar, Winnacker Albrecht:Investigation of mass transport during SiC PVT growth using digital X-Ray Imaging, 13C labeling of source material and numerical modeling Materials Science Forum 433-436 2003 ), S. 9 ISSN: 0255-5476 Herro ZG. , Wellmann P. , Püsche R. , Hundhausen M. Ley L. Maier M. , Masri P. , Winnacker A. :Investigation of mass transport during PVT growth of SiC by 13C labeling of source material Journal of Crystal Growth 258 2003 ), S. 261-267 ISSN: 0022-0248 10.1016/S0022-0248(03)01538-0 Püsche R., Hundhausen Martin, Ley Lothar:Raman excitation profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC Materials Science Forum 433-436 2003 ), S. 325 ISSN: 0255-5476 Herro Z., Wellmann P.J., Püsche R., Hundhausen Martin, Ley Lothar, Maier M., Masri P., Winnacker Albrecht:Investigation of mass transport during PVT growth of SiC by 13C labelling of source material Journal of Crystal Growth 258 2003 ), S. 261 ISSN: 0022-0248 10.1016/S0022-0248(03)01538-0 Steeds J. W., Evans G. A., Furkert S., Ley Lothar, Hundhausen Martin, Schulze N., Pensl Gerhard:Indentification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H-SiC by Photoluminescence Spectroscopy Materials Science Forum 433-436 2003 ), S. 305 ISSN: 0255-5476 Wellmann P. , Herro ZG. , Selder M. , Durst F. , Püsche R. , Hundhausen M. Ley L. Winnacker A. :Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling Materials Science Forum 433-436 2003 ), S. 9-12 ISSN: 0255-5476 10.4028/www.scientific.net/MSF.433-436.9 2002 Herzog B., Rohmfeld S., Hundhausen Martin, Ley Lothar, Semmelroth K., Pensl Gerhard:Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy Materials Science Forum 389-393 2002 ), S. 625 ISSN: 0255-5476 S. Rohmfeld, Hundhausen Martin, Ley Lothar, C. A. Zorman, M. Mehregany:Quantitative evaluation of biaxial strain in epitaxial 3 C- SiC layers on Si(100) substrates by Raman spectroscopy Journal of Applied Physics 91 2002 ), S. 1113 ISSN: 0021-8979 Evans G. A., Steeds J. W., Ley Lothar, Hundhausen Martin, Schulze N., Pensl Gerhard:Identification of carbon interstitials in electron irradiated 6H-SiC by use of a 13C enriched specimen Physical Review B 66 2002 ), S. 035204-1 ISSN: 0163-1829 2001 Pensl Gerhard, Stephani Dietrich, Hundhausen Martin (Hrsg.):Silicon Carbide and Related Materials (ECSCRM 2000) Uetikon-Zuerich 2001 ISBN: 0-87849-873-7 Schmidt JA, Hundhausen M, Ley L:Analysis of the moving photocarrier grating technique for semiconductors of high defect density Physical Review B 64 2001 )ISSN: 0163-1829 Rohmfeld Stefan, Hundhausen Martin, Ley Lothar, Schulze Norbert, Pensl Gerhard:Isotope-Disorder-Induced Line Broadening of Phonons in the Raman Spectra of SiC Physical Review Letters 86 2001 ), S. 826 ISSN: 0031-9007 10.1103/PhysRevLett.86.826 Stark Tanja, L. Gutowski, M. Herden, H. Grunleitner, S. Kohler, Hundhausen Martin, Ley Lothar:Ti-Silicide Formation During Isochronal Annealing Followed by in situ Ellipsometry Microelectronic Engineering 55 2001 ), S. 101 ISSN: 0167-9317 10.1016/S0167-9317(00)00434-2 2000 Stark Tanja, H. Grünleitner, Hundhausen Martin, Ley Lothar:Deriving the kinetic parameters for Pt-silicide formation from temperature ramped in situ ellipsometric measurements Thin Solid Films 358 2000 ), S. 73-79 ISSN: 0040-6090 10.1016/S0040-6090(99)00699-9 Püsche Roland, S. Rohmfeld, Hundhausen Martin, Ley Lothar:Disappearance of the LO-Phonon line in the Raman spectrum of 6H-SiC Materials Science Forum 338-342 2000 ), S. 583 ISSN: 0255-5476 Rohmfeld Stefan, Hundhausen Martin, Ley Lothar, Schulze Norbert, Pensl Gerhard:Isotope Effects on the Raman Spectrum of SiC Materials Science Forum 338-342 2000 ), S. 579 ISSN: 0255-5476 1999 Schulze N., Barrett D., Pensl Gerhard, Rohmfeld S., Hundhausen Martin:Near-thermal equilibrium growth of SiC by physical vapor transport Materials Science and Engineering B-Advanced Functional Solid-State Materials 61-62 1999 ), S. 44 ISSN: 0921-5107 Zhou Shi-Ming, Hundhausen Martin, Stark Tanja, Chen L.Y., Ley Lothar:Kinetics of platinum silicide formation followed in situ by spectroscopic ellipsometry Journal of Vacuum Science & Technology A 17 1999 ), S. 144 ISSN: 0734-2101 Ley Lothar, Stark Tanja, Hundhausen Martin, Gruenleitner Holger:Modeling the evolution of ellipsometric data during the thermally induced Pt-silicide formation: activation energies and prefactors In Situ Process Diagnostics and Modelling (San Francisco 6. April 1999 - 7. April 1999 )In: Symposium. Materials Research Society 1999 1998 1997 1996 Hundhausen M. The moving photocarrier grating technique for the determination of transport parameters in thin film semiconductors Journal of Non-Crystalline Solids 198-200 1996 ), S. 146 ISSN: 0022-3093 10.1016/0022-3093(95)00667-2 Hundhausen Martin, Nagy A., Ley Lothar:High field transport in the inversion layer of amorphous silicon thin film transistors Journal of Non-Crystalline Solids 198-200 1996 ), S. 230 ISSN: 0022-3093 10.1016/0022-3093(95)00718-0 Hundhausen Martin, Ley Lothar, Witt C.:Influence of space charges on the resonant photoconductor employing a moving laser inducde grating Applied Physics Letters 69 1996 ), S. 1746 ISSN: 0003-6951 Teuschler Thomas, Mahr K., Miyazaki Seiichi, Hundhausen Martin, Ley Lothar:Nanometer-scale modification of the tribological properties of Si(111):H surfaces performed and investigated by a conducting-probe scanning force microscope Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 14 1996 ), S. 1268 ISSN: 0734-211X Hundhausen Martin, Ley Lothar, Witt C.:Resonant photoconductor structures for the generation of microwave currents: Importance of space charges 23rd Int. Conf. on the Physics of Semiconductors (Berlin In: proc. 23rd Int. Conf. on the Physics of Semiconductors , Berlin 1996 Strauß Johannes, Hundhausen Martin, Ley Lothar:Sensitive measurement of laser induced photocarrier gratings in semiconductors by optical heterodyne detection 23rd Int. Conf. on the Physics of Semiconductors (Berlin In: proc. 23rd Int. Conf. on the Physics of Semiconductors , Berlin 1996 Ley Lothar, Teuschler Ralf, Mahr K., Miyazaki Seiichi, Hundhausen Martin:Kinetics of field induced oxidation of hydrogen terminated Si(111) by means of a scanning force micoscope Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 14 1996 ), S. 2845 ISSN: 0734-211X Stöckel R., Janischowsky Klemens, Rohmfeld Stefan, Ristein Jürgen, Hundhausen Martin, Ley Lothar:Growth of diamond on silicon during the bias pretreatment in chemically vapour deposition of polycristalline diamond films Journal of Applied Physics 76 1996 ), S. 768 ISSN: 1089-7550 1995 Haken U., Hundhausen Martin, Ley Lothar:Analysis of the moving-photocarrier-grating technique for the determination of the mobility and lifetime of photocarriers in semiconductors Physical Review B 51 1995 ), S. 10579 ISSN: 0163-1829 10.1103/PhysRevB.51.10579 Hundhausen M. Ley L. Bipolar treatment of the electrically detected transient grating technique Applied Physics Letters 67 1995 ), S. 2518 ISSN: 0003-6951 Weigelt G., Hundhausen Martin, Ley Lothar:Is persistent photoconductivity in nipi-structures of amorphous silicon due to the Staebler Wronski e Solid State Phenomena 44-46 1995 ), S. 495 ISSN: 1012-0394 Teuschler Thomas, Mahrt-Hülbig Karin, Miyazaki Seiichi, Hundhausen Martin, Ley Lothar:Nanometerâscale modification of the tribological properties of Si(100) by scanning force microscope Applied Physics Letters 66 1995 ), S. 2499-2501 ISSN: 0003-6951 10.1063/1.113146 Teuschler Thomas, Mahrt-Hülbig Karin, Miyazaki Seiichi, Hundhausen Martin, Ley Lothar:Nanometer-scale field-induced oxidation if Si(111): H by a conducting-probe scanning force microscope: Doping dependence and kinetics Applied Physics Letters 67 1995 ), S. 3144 ISSN: 0003-6951 10.1063/1.114861 Nagy A., Hundhausen Martin, Ley Lothar, Brunst G., Holzenkämpfer E.:Steady-state hopping conduction in the conduction band tail of a-Si:H studied in thin Physical Review B - Condensed Matter and Materials Physics 52 1995 ), S. 11289 ISSN: 1550-235X Stöckel R., Janischowsky Klemens, Rohmfeld Stefan, Ristein Jürgen, Hundhausen Martin, Ley Lothar:Diamond growth during the bias pretreatment in microwave CVD of diamond Diamond and Related Materials 5 1995 ), S. 321 ISSN: 0925-9635 1994 Witt C., Haken U., Hundhausen Martin:Determination of the Photocarrier Lifetime in Amorphous Silicon with the Moving Photocarrier Grating Technique Japanese Journal of Applied Physics 33 1994 ), S. L1809 ISSN: 0021-4922 Teuschler Thomas, Hundhausen Martin, Eckstein Ralf, Ley Lothar:Cross-Sectional Scanning Tunneling and Scanning Force Microscopy of Amorphous Hydrogenated Silicon pn-Doping-Superlattices in Nitrogen and Air Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 12 1994 ), S. 2440 ISSN: 0734-211X Teuschler Thomas, Hundhausen Martin, Ley Lothar:Cross-sectional scanning-tunneling-spectroscopy of a-Si:H pn-doping superlattices Superlattices and Microstructures 16 1994 ), S. 271 ISSN: 0749-6036 Teuschler Thomas, Hundhausen Martin, Ley Lothar:Influence of light on individual defect noise in a-Si:H/a-SiNx:H double barrier structures Journal of Applied Physics 75 1994 ), S. 2690 ISSN: 0021-8979 10.1063/1.356222 Hundhausen Martin, Haken U., Ley Lothar:Moving Photocarrier Grating Technique for Mobility and Lifetime Measurements in Amorphous Semiconductors Materials Research Society Symposium - Proceedings 336 1994 ), S. 353 ISSN: 0272-9172 Graupner Ralf, Stöckel R., Janischowsky Klemens, Ristein Jürgen, Hundhausen Martin, Ley Lothar:The influence of surface treatment on the electronic structure of CVD diamond films Diamond and Related Materials 3 1994 ), S. 891 ISSN: 0925-9635 10.1016/0925-9635(94)90294-1 1993 Teuschler Thomas, Hundhausen Martin, Ley Lothar, Arce R.:Analysis of Random telegraph noise in large-area amorphous double-barrier structures Physical Review B 47 1993 ), S. 12687 ISSN: 0163-1829 10.1103/PhysRevB.47.12687 Haken U., Hundhausen Martin, Ley Lothar:Carrier Mobility and Lifetime in a-Si:H determined by the Moving Grating Technique Journal of Non-Crystalline Solids 164-166 1993 ), S. 497 ISSN: 0022-3093 10.1016/0022-3093(93)90598-R Nagy A., Hundhausen Martin, Ley Lothar, Brunst G., Holzenkämpfer E.:Field enhanced conductivity in a-Si:H thin film transistors Journal of Non-Crystalline Solids 164-166 1993 ), S. 529 ISSN: 0022-3093 10.1016/0022-3093(93)90606-X Haken U., Hundhausen Martin, Ley Lothar:Moving Grating Technique: A New Method for the Determination of Electron and Hole Mobilities and their Lifetime Applied Physics Letters 63 1993 ), S. 3066 ISSN: 0003-6951 10.1063/1.110260 Xu S., Hundhausen Martin, Ristein Jürgen, Yan. B., Ley Lothar:Influence of substrate bias on the properties of a-C:H films prepared by plasma CVD Journal of Non-Crystalline Solids 164-166 1993 ), S. 1127 ISSN: 0022-3093 10.1016/0022-3093(93)91197-B Stöckel R., Graupner Ralf, Janischowsky Klemens, Xu S., Ristein Jürgen, Hundhausen Martin, Ley Lothar:Initial stages in the growth of polycrystalline diamond on silicon Diamond and Related Materials 2 1993 ), S. 1467 ISSN: 0925-9635 10.1016/0925-9635(93)90014-S 1991 Teuschler Thomas, Hundhausen Martin, Ley Lothar, Viczian C.:Individual electronic defect states in a-Si:H/a-SiNx double barrier structures Journal of Non-Crystalline Solids 137&138 1991 ), S. 1107 ISSN: 0022-3093 10.1016/S0022-3093(05)80316-3 Santos P., Hundhausen Martin, Ley Lothar, Viczian C.:Structure of interfaces in a-Si:H/a-SiNx:H superlattices Journal of Applied Physics 69 1991 ), S. 778 ISSN: 1089-7550 Hundhausen M. Ley L. The formation and stability of sub-micron clusters in silane and argon plasmas Journal of Non-Crystalline Solids 137&138 1991 ), S. 795 ISSN: 0022-3093 10.1016/S0022-3093(05)80240-6 1989 1988 1987 1986 1985 Santos P., Hundhausen Martin, Ley Lothar:Experimental evidence for Phonon folding in compositional amorphous Superlattices Journal of Non-Crystalline Solids 77&78 1985 ), S. 1069 ISSN: 0022-3093 10.1016/0022-3093(85)90842-7 Hundhausen M. Ley L. Model for persistent photoconductivity in doping-modulated amorphous silicon superlattices Physical Review B 32 1985 ), S. 6655 ISSN: 0163-1829 10.1103/PhysRevB.32.6655 Santos P., Hundhausen Martin, Ley Lothar:Observation of folded-zone acoustical phonons by Raman scattering Physical Review B - Condensed Matter and Materials Physics 33 1985 ), S. 1516 ISSN: 1550-235X Hundhausen M. Ley L. Persistent Photoconductivity in Doping-modulated amorphous silicon superlattices Journal of Non-Crystalline Solids 77&78 1985 ), S. 1051 ISSN: 0022-3093 10.1016/0022-3093(85)90839-7 1984 1983
