Jürgen Ristein

2020

• Boolakee T., Heide C., Wagner F., Ott C., Schlecht MT., Ristein J., Weber HB., Hommelhoff P.:
  Length-dependence of light-induced currents in graphene
  In: Journal of Physics B-Atomic Molecular and Optical Physics (2020)
  ISSN: 0953-4075
  DOI: 10.1088/1361-6455/ab9075
  URL: https://iopscience.iop.org/article/10.1088/1361-6455/ab9075
• Heide C., Hauck M., Higuchi T., Ristein J., Ley L., Weber HB., Hommelhoff P.:
  Attosecond-fast internal photoemission
  In: Nature Photonics 14 (2020), S. 219–222
  ISSN: 1749-4885
  DOI: 10.1038/s41566-019-0580-6
  URL: https://arxiv.org/abs/2001.02989

2019

• Kozak M., Higuchi T., McNeur J., Shiloh R., Heide C., Paschen T., Yousefi P., Sturm C., Li A., Illmer J., Meier S., Schönenberger N., Dienstbier P., Tafel A., Weber P., Zimmermann R., Seidling M., Mittelbach A., Heimerl J., Eckstein T., Hundhausen M., Ristein J., Hommelhoff P.:
  From strong-field physics in and at nanoscale matter to photonics-based laser accelerators
  XXI International Conference on Ultrafast Phenomena 2018 (UP 2018)
  In: 205 2019
  DOI: 10.1051/epjconf/201920508009
  URL: https://www.epj-conferences.org/articles/epjconf/abs/2019/10/epjconf_up2019_08009/epjconf_up2019_08009.html
• Tafel A., Meier S., Ristein J., Hommelhoff P.:
  Femtosecond Laser-Induced Electron Emission from Nanodiamond-Coated Tungsten Needle Tips
  In: Physical Review Letters 123 (2019), Art.Nr.: 146802
  ISSN: 0031-9007
  DOI: 10.1103/PhysRevLett.123.146802
  URL: https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.123.146802
• Tafel A., Wu M., Spiecker E., Hommelhoff P., Ristein J.:
  Fabrication and structural characterization of diamond-coated tungsten tips
  In: Diamond and Related Materials 97 (2019), Art.Nr.: 107446
  ISSN: 0925-9635
  DOI: 10.1016/j.diamond.2019.107446

2016

• Bashouti MY., Talebi R., Kassar T., Nahal A., Ristein J., Unruh T., Christiansen SH.:
  Systematic Surface Phase Transition of Ag Thin Films by Iodine Functionalization at Room Temperature: Evolution of Optoelectronic and Texture Properties
  In: Scientific Reports 6 (2016)
  ISSN: 2045-2322
  DOI: 10.1038/srep21439
• Kulmas M., Paerson L., Höflich K., Bashouti MY., Wu Y., Göbelt M., Ristein J., Bachmann J., Meyer B., Christiansen S.:
  Composite Nanostructures of TiO2 and ZnO for Water Splitting Application: Atomic Layer Deposition Growth and Density Functional Theory Investigation
  In: Advanced Functional Materials 26 (2016), S. 4882-4889
  ISSN: 1616-301X
  DOI: 10.1002/adfm.201505524

2015

• Bashouti MY., Resch S., Ristein J., Mackovic M., Spiecker E., Waldvogel SR., Christiansen SH.:
  Functionalization of Silver Nanowires Surface using Ag-C Bonds in a Sequential Reductive Method
  In: ACS Applied Materials and Interfaces 7 (2015), S. 21657-21661
  ISSN: 1944-8244
  DOI: 10.1021/acsami.5b06830
• Bashouti MY., Yousefi P., Ristein J., Christiansen SH.:
  Electronic Properties of Si-Hx Vibrational Modes at Si Waveguide Interface.
  In: Journal of Physical Chemistry Letters 6 (2015), S. 3988-93
  ISSN: 1948-7185
  DOI: 10.1021/acs.jpclett.5b01918
• Sorger C., Hertel S., Jobst J., Steiner C., Meil K., Ullmann K., Albert A., Wang Y., Krieger M., Ristein J., Maier S., Weber HB.:
  Gateless patterning of epitaxial graphene by local intercalation
  In: Nanotechnology 26 (2015), S. 025302
  ISSN: 1361-6528
  DOI: 10.1088/0957-4484/26/2/025302

2013

• Bashouti M., Ristein J., Haick H., Christiansen SH.:
  A Non-Oxidative Approach Towards Hybrid Silicon Nanowire- Based Solar Cell Heterojunctions
  In: Hybrid Materials 1 (2013), S. 2
  ISSN: 2299-3940
  DOI: 10.2478/hyma-2013-0002
• Bashouti MY., Pietsch M., Broenstrup G., Sivakov V., Ristein J., Christiansen S.:
  Heterojunction based hybrid silicon nanowire solar cell: surface termination, photoelectron and photoemission spectroscopy study
  In: Progress in Photovoltaics: Research and Applications (2013), S. n/a
  ISSN: 1099-159X
  DOI: 10.1002/pip.2315
• Bashouti MY., Sardashti K., Ristein J., Christiansen S.:
  Kinetic study of H-terminated silicon nanowires oxidation in very first stages
  In: Nanoscale Research Letters 8 (2013), S. 41
  ISSN: 1931-7573
  DOI: 10.1186/1556-276X-8-41
• Bashouti MY., Sardashti K., Schmitt SW., Pietsch M., Ristein J., Haick H., Christiansen SH.:
  Oxide-free hybrid silicon nanowires: From fundamentals to applied nanotechnology
  In: Progress in Surface Science 88 (2013), S. 39
  ISSN: 0079-6816
  DOI: 10.1016/j.progsurf.2012.12.001
• Ley L., Smets Y., Pakes CI., Ristein J.:
  Calculating the Universal Energy –Level Alignment of Organic Molecules on Metal Oxides
  In: Advanced Functional Materials 23 (2013), S. 794
  ISSN: 1616-301X
  DOI: 10.1002/adfm.201201412
• O'Donnell KM., Edmonds MT., Ristein J., Tadich A., Thomsen L., Wu QH., Pakes CI., Ley L.:
  Diamond surfaces with air-stable negative electron affinity and giant electron yield enhancement
  In: Advanced Functional Materials 23 (2013), S. 5608-5614
  ISSN: 1616-301X
  DOI: 10.1002/adfm.201301424
• Rietwyk KJ., Smets Y., Bashouti M., Christiansen SH., Schenk A., Tadich A., Edmonds MT., Ristein J., Ley L., Pakes CI.:
  Charge transfer doping of Silicon
  In: Physical Review Letters n/a (2013), S. n/a
  ISSN: 0031-9007
  DOI: 10.1103/PhysRevLett.112.155502

2012

• Bashouti MY., Sardashti K., Ristein J., Christiansen SH.:
  Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy
  In: Physical Chemistry Chemical Physics 14 (2012), S. 11877
  ISSN: 1463-9076
  DOI: 10.1039/c2cp41709j
• Ley L., Ristein J.:
  Diamond Surfaces
  In: Surface and Interface Science, Weinheim, Germany: Wiley-VCH, 2012, S. 889-940
• Ristein J., Mammadov S., Seyller T.:
  Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide
  In: Physical Review Letters 108 (2012), S. 246104
  ISSN: 0031-9007
  DOI: 10.1103/PhysRevLett.108.246104

2011

• Edmonds MT., Pakes CI., Mammadov S., Zhang W., Tadich A., Ristein J., Ley L.:
  Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond
  In: Applied Physics Letters 88 (2011), S. 102101
  ISSN: 0003-6951
  DOI: 10.1063/1.3561760

2010

• Ristein J., Zhang W., Speck F., Ostler M., Ley L., Seyller T.:
  Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide
  In: Journal of Physics D-Applied Physics 43 (2010), S. 345303
  ISSN: 0022-3727
  DOI: 10.1088/0022-3727/43/34/345303
• Strobel P., Ristein J., Ley L.:
  Ozone-Mediated Polymerization of Fullerene and Fluorofullerene Thin Films
  In: Journal of Physical Chemistry C 114 (2010), S. 4317
  ISSN: 1932-7447
  DOI: 10.1021/jp9105635

2008

• Lazea A., Mortet V., D'Haen J., Geithner P., Ristein J., D'Olieslaeger M., Haenen K.:
  Growth of polycrystalline phosphourous-doped CVD diamond layers
  In: Chemical Physics Letters 454 (2008), S. 310
  ISSN: 0009-2614
  DOI: 10.1016/j.cplett.2008.02.030
• Mares JJ., Hubik P., Kristofik J., Ristein J., Strobel P., Ley L.:
  Influence of ambient humidity on the surface conductivity of hydrogenated diamond
  In: Diamond and Related Materials 17 (2008), S. 1356
  ISSN: 0925-9635
  DOI: 10.1016/j.diamond.2008.01.063
• Ristein J., Zhang W., Ley L.:
  Hydrogen-terminated diamond electrodes: I. Charges, potentials, energies
  In: Physical Review E 78 (2008), S. 041602
  ISSN: 1539-3755
  DOI: 10.1103/PhysRevE.78.041602
• Zhang W., Ristein J., Ley L.:
  Hydrogen-terminated diamond electrodes: II. Redox activity
  In: Physical Review E 78 (2008), S. 041603
  ISSN: 1539-3755
  DOI: 10.1103/PhysRevE.78.041603

2006

• Ristein J.:
  Diamond surfaces: familiar and amazing
  In: Applied Physics A-Materials Science & Processing 82 (2006), S. 337
  ISSN: 0947-8396
  DOI: 10.1007/s00339-005-3363-5
• Ristein J.:
  Surface science of diamond: familiar and amazing
  In: Surface Science 600 (2006), S. 3677
  ISSN: 0039-6028
  DOI: 10.1016/j.susc.2006.01.087
• Ristein J.:
  Surface transfer doping of semiconductors
  In: Science 313 (2006), S. 1057
  ISSN: 0036-8075
  DOI: 10.1126/science.1127589
• Strobel Paul, Ristein Jürgen, Ley Lothar, Seppelt K., Goldt I.V., Boltalina Olga:
  Surface conductivity induced by fullerenes on diamond: passivation and thermal stability
  In: Diamond and Related Materials 15 (2006), S. 720
  ISSN: 0925-9635
  DOI: 10.1016/j.diamond.2005.10.034
• Ley Lothar, Ristein Jürgen, Maier Frederic, Riedel Marc, Strobel Paul:
  Surface conductivity of diamond: a novel transfer doping mechanism
  In: Physica B-Condensed Matter 376-377 (2006), S. 262
  ISSN: 0921-4526
  DOI: 10.1016/j.physb.2005.12.068
• Ristein J., Strobel P., Ley L.:
  Surface conductivity of diamond: a novel doping mechanism
  In: Advances in Science and Technology 48 (2006), S. 93
  ISSN: 1662-8969

2005

• Larsson K., Ristein Jürgen:
  Diamond surface conductivity under atmospheric conditions; theoretical approach
  In: Journal of Physical Chemistry B 109 (2005), S. 10304
  ISSN: 1520-6106
  DOI: 10.1021/jp050419h
• Ristein J.:
  The physics of hydrogen-terminated diamond surfaces
  In: AIP Conference Proceedings 772 (2005), S. 377
  ISSN: 0094-243X
  DOI: 10.1063/1.1994145
• Strobel Paul, Riedel Marc, Ristein Jürgen, Ley Lothar, Boltalina Olga:
  Surface transfer doping of diamond by fullerene
  In: Diamond and Related Materials 14 (2005), S. 451
  ISSN: 0925-9635
  DOI: 10.1016/j.diamond.2004.12.051

2004

• Ristein J.:
  Charge carrier diffusion profiles in wide band gap semiconductors
  In: Diamond and Related Materials 13 (2004), S. 808
  ISSN: 0925-9635
  DOI: 10.1016/j.diamond.2003.11.102
• Ristein J.:
  Structural and electronic properties of diamond surfaces
  In: Thin Film Diamond (part II), Amsterdam: Elsevier, 2004, S. 37-96 (Semiconductors and Semimetals, Bd.77)
• Nebel C.E., Ristein Jürgen (Hrsg.):
  Thin Film Diamond (part II)
  Amsterdam: 2004
  (Semiconductors and Semimetals, Bd. 77)
• Ristein Jürgen, Riedel Marc, Ley Lothar:
  Electrochemical surface transfer doping: the mechanism behind the surface conductivity of hydrogen terminated diamond
  In: Journal of The Electrochemical Society 151 (2004), S. E315
  ISSN: 0013-4651
  DOI: 10.1149/1.1785797
• Riedel Marc, Ristein Jürgen, Ley Lothar:
  Recovery of surface conductivity of H-terminated diamond after thermal annealing in vacuum
  In: Physical Review B 69 (2004), S. 125338
  ISSN: 0163-1829
• Strobel Paul, Riedel Marc, Ristein Jürgen, Ley Lothar:
  Surface transfer doping of diamond
  In: Nature 430 (2004), S. 439
  ISSN: 0028-0836
  DOI: 10.1038/nature02751
• Riedel Marc, Ristein Jürgen, Ley Lothar:
  The Impact of Ozone on the Surface Conductivity of Single Crystal Diamond
  In: Diamond and Related Materials 13 (2004), S. 746
  ISSN: 0925-9635
  DOI: 10.1016/j.diamond.2003.11.094

2003

• Ristein Jürgen, Riedel Marc, Ley Lothar, Takeuchi Daisuke, Okushi Hideyo:
  Band diagrams of intrinsic and p-tye diamond with hydrogenated surfaces
  In: physica status solidi (a) 199 (2003), S. 64
  ISSN: 1862-6300
• Rezek Bohuslav, Sauerer C., Nebel C.E., Stutzmann M., Ristein Jürgen, Ley Lothar, Snidero E., Bergonzo P.:
  Fermi level on hydrogen terminated diamond surfaces
  In: Applied Physics Letters 82 (2003), S. 2266
  ISSN: 0003-6951
  DOI: 10.1063/1.1564293
• Takeuchi Daisuke, Riedel Marc, Ristein Jürgen, Ley Lothar:
  Surface band bending and surface conductivity of hydrogenated diamond
  In: Physical Review B 68 (2003), S. 41304(R)
  ISSN: 0163-1829

2002

• Walter Sebastian, Bernhardt Jens, Starke Ulrich, Heinz Klaus, Maier Florian, Ristein Jürgen, Ley Lothar:
  Geometry of the (2x1) reconstruction of diamond(111)
  In: Journal of Physics: Condensed Matter 14 (2002), S. 3085-3092
  ISSN: 0953-8984
  URL: http://www.fkp.uni-erlangen.de/literatur/abstracts_kh/240.html
• Ristein J., Ley L.:
  Comment on "Effect of average grain size on the work function of diamond films"
  In: Applied Physics Letters 81 (2002), S. 183
  ISSN: 0003-6951
• Ristein Jürgen, Riedel Marc, Stammler Martin, Mantel Berthold F., Ley Lothar:
  Surface conductivity of nitrogen-doped diamond
  In: Diamond and Related Materials 11 (2002), S. 359
  ISSN: 0925-9635
  DOI: 10.1016/S0925-9635(02)00022-5
• Stammler M., Eisenbeiß H., Ristein J., Neubauer J., Göbbels M., Ley L., Ristein J., Ley L.:
  Growth of high-quality homoepitaxial diamond films by HF-CVD
  In: Diamond and Related Materials 11 (2002), S. 504-508
  ISSN: 0925-9635
  DOI: 10.1016/S0925-9635(01)00627-6

2001

• Eisenbeiß H., Stammler M., Ristein J., Ley L., Göbbels M., Neubauer J.:
  Herstellung und Charakterisierung stickstoffreicher, qualitativ hochwertiger homo-epitaktischer Diamantfilme mittels Heißdraht-CVD
  In: European Journal of Mineralogy 13 (2001), S. 48
  ISSN: 0935-1221
• Ristein J.:
  Electron affinities of diamond surfaces
  In: Growth, Properties and Application of Diamond, London: INSPEC, 2001, S. 73
• Ristein Jürgen, Maier Florian, Riedel Marc, Stammler Markus, Ley Lothar:
  Diamond surface conductivity experiments and photoelectron spectroscopy
  In: Diamond and Related Materials 10 (2001), S. 416
  ISSN: 0925-9635
  DOI: 10.1016/S0925-9635(00)00555-0
• N. Sieber, B. Mantel, Seyller Thomas, Ristein Jürgen, Ley Lothar, T. Heller, D. R. Batchelor, D. Schmeisser:
  Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination
  In: Applied Physics Letters 78 (2001), S. 1216
  ISSN: 0003-6951
  DOI: 10.1063/1.1351845
• Sieber N., Mantel Berthold F., Seyller Thomas, Ristein Jürgen, Ley Lothar:
  Hydrogenation of 6H-SiC as a Surface Passivation Stable in Air
  In: Diamond and Related Materials 10 (2001), S. 1291
  ISSN: 0925-9635
  DOI: 10.1016/S0925-9635(00)00529-X
• Sieber N., Seyller Thomas, Mantel Berthold F., Ristein Jürgen, Ley Lothar:
  Preparation and characterization of hydrogen terminated 6H-SiC
  In: Materials Science Forum 353-356 (2001), S. 223
  ISSN: 0255-5476
• Maier Frederic, Riedel Marc, Ristein Jürgen, Ley Lothar:
  Spectroscopic Investigations of Diamond/Hydrogen/Metal and Diamond/Metal Interfaces
  In: Diamond and Related Materials 10 (2001), S. 506
  ISSN: 0925-9635
  DOI: 10.1016/S0925-9635(00)00535-5
• Ristein Jürgen, Riedel Marc, Maier Frederic, Mantel Berthold F., Stammler Martin, Ley Lothar:
  Surface Conductivity of Diamond as a Function of Nitrogen Doping
  In: physica status solidi (a) 186 (2001), S. 249
  ISSN: 1862-6300
  DOI: 10.1002/1521-396X(200108)186:23.0.CO;2-6
• Ristein Jürgen, Riedel Marc, Maier Frederic, Mantel Berthold F., Stammler Martin, Ley Lothar:
  Surface doping: a special feature of diamond
  In: Journal of Physics: Condensed Matter 13 (2001), S. 8979
  ISSN: 0953-8984
  DOI: 10.1088/0953-8984/13/40/314
• Mantel Berthold, Stammler Markus, Ristein Jürgen, Ley Lothar:
  The correlation between surface conductivity and adsorbate coverage on diamond as studied by infrared spectroscopy
  In: Diamond and Related Materials 10 (2001), S. 429
  ISSN: 0925-9635
  DOI: 10.1016/S0925-9635(00)00601-4
• Ristein J., Maier F., Ley L.:
  Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces
  In: Physical Review B 64 (2001), S. 165411
  ISSN: 1098-0121

2000

• Cui Jingbiao, Ristein Jürgen, Stammler Martin, Janischowsky Klemens, Kleber G., Ley Lothar:
  Hydrogen termination and electron emission from CVD diamond surfaces: a combined SEM, PEEM, photoelectron yield, and field emission study
  In: Diamond and Related Materials 9 (2000), S. 1143
  ISSN: 0925-9635
• Cui Jingbiao, Stammler Martin, Ristein Jürgen, Ley Lothar:
  The role of hydrogen for field emission from chemical vapour deposited diamond and nanocrystaline diamond powder
  In: Journal of Applied Physics 88 (2000), S. 3667
  ISSN: 1089-7550
• Ristein J.:
  Electronic properties of diamond surfaces - blessing or curse for devices?
  In: Diamond and Related Materials 9 (2000), S. 1129
  ISSN: 0925-9635
  DOI: 10.1016/S0925-9635(99)00316-7
• Ley Lothar, Ristein Jürgen, Graupner Ralf:
  Comment on ‘quantum confinement effect in diamond nanocrystals studied by x-ray-absorption spectroscopy’
  In: Physical Review Letters 84 (2000), S. 5679
  ISSN: 0031-9007
• Sieber Norbert, Hollering Markus, Ristein Jürgen, Ley Lothar, J. Riley, R. Leckey:
  Photoemission study of the silicate adlayer reconstruction on 6H-SiC(0001)
  In: Materials Science Forum 338-342 (2000), S. 391
  ISSN: 0255-5476
• Ristein Jürgen, Cui Jingbiao, Graupner Ralf, Maier Frederic, Riedel Marc, Mantel Berthold F., Stammler Markus, Ley Lothar:
  The role of adsorbates and defects on diamond surfaces
  In: New Diamond and Frontier Carbon Technology 10 (2000), S. 363
  ISSN: 1344-9931
• Maier Florian, Riedel Marc, Mantel B. , Ristein Jürgen, Ley Lothar:
  Origin of surface conductivity in diamond
  In: Physical Review Letters 85 (2000), S. 3472-5
  ISSN: 0031-9007
  DOI: 10.1103/PhysRevLett.85.3472
• Ristein Jürgen, Maier Florian, Riedel Marc, Cui Jingbiao, Ley Lothar:
  Surface electronic properties of diamond
  In: physica status solidi (a) 181 (2000), S. 65
  ISSN: 1862-6300
  DOI: 10.1002/1521-396X(200009)181:13.0.CO;2-Z

1999

• Maier Frederic, Graupner Ralf, Hollering Markus, Hammer Lutz, Ristein Jürgen, Ley Lothar:
  The hydrogenated and bare diamond (110) surface: a combined LEED-, XPS-, and ARPES study
  In: Surface Science 443 (1999), S. 177
  ISSN: 0039-6028
  DOI: 10.1016/S0039-6028(99)01010-9
• Ley Lothar, Graupner Ralf, Cui Jingbiao, Ristein Jürgen:
  Electronic properties of single crystalline diamond surfaces
  In: Carbon 37 (1999), S. 793
  ISSN: 0008-6223
  DOI: 10.1016/S0008-6223(98)00273-5
• Ley Lothar, Mantel Berthold F., Matura K., Stammler Markus, Janischowsky Klemens, Ristein Jürgen:
  Infrared spectroscopy of C-D vibrational modes on diamond (100) surfaces
  In: Surface Science 427-428 (1999), S. 245
  ISSN: 0039-6028
  DOI: 10.1016/S0039-6028(99)00273-3
• Hollering Markus, Maier Florian, Sieber Norbert, Stammler Markus, Ristein Jürgen, Ley Lothar, A. Stampfl, J. Riley, R. Leckey:
  Electronic states of an ordered oxide on C-terminated 6H-SiC
  In: Surface Science 442 (1999), S. 531
  ISSN: 0039-6028
  DOI: 10.1016/S0039-6028(99)00998-X
• Cui Jingbiao, Ristein Jürgen, Ley Lothar:
  Dehydrogenation and the surface phase transition on diamond (111): kinetics and electronic structure
  In: Physical Review B 59 (1999), S. 5847
  ISSN: 0163-1829
• Cui Jingbiao, Graupner Ralf, Ristein Jürgen, Ley Lothar:
  Electron affinity and band bending of the single crystal diamond (111) surface
  In: Diamond and Related Materials 8 (1999), S. 792
  ISSN: 0925-9635
• Cui Jingbiao, Ristein Jürgen, Ley Lothar:
  Low threshold electron emission from diamond
  In: Physical Review B 60 (1999), S. 16135
  ISSN: 0163-1829
• Graupner Ralf, Ristein Jürgen, Ley Lothar, Jung Ch.:
  Surface sensitive K-edge absorption spectroscopy of clean and hydrogen terminated diamond (111) and (100) surfaces
  In: Physical Review B 60 (1999), S. 17023
  ISSN: 0163-1829
• Stammler Martin, Ristein Jürgen, Habermann T., Janischowsky Klemens, Nau D., Müller Gerhard, Ley Lothar:
  Field emission measurements with micrometre resolution on carbon nanostructures
  In: Diamond and Related Materials 8 (1999), S. 792
  ISSN: 0925-9635

1998

• Graupner Ralf, Maier Florian, Ristein Jürgen, Ley Lothar:
  High resolution surface sensitive C1s core level spectra of clean and hydrogen terminated diamond (100) and (111) surfaces
  In: Physical Review B - Condensed Matter and Materials Physics 57 (1998), S. 12397
  ISSN: 1550-235X
• Ristein Jürgen, Stief R.T., Beyer Wolfgang Fritz, Ley Lothar:
  A comparative analysis of a-C:H by infrared spectroscopy and mass selected thermal effusion
  In: Journal of Applied Physics 84 (1998), S. 3836-3847
  ISSN: 1089-7550
  DOI: 10.1063/1.368563
• Cui Jingbiao, Ristein Jürgen, Ley Lothar:
  Electron affinity of the bare and hydrogen covered single crystal diamond (111) surface
  In: Physical Review Letters 81 (1998), S. 429-432
  ISSN: 0031-9007
  DOI: 10.1103/PhysRevLett.81.429
• Schäfer J, Ristein Jürgen, Miyazaki Seiichi, Ley Lothar:
  Formation of the interface between c-Si(111) and diamond-like carbon studied with photoelectron spectroscopy
  In: Applied Surface Science 123/124 (1998), S. 11
  ISSN: 0169-4332
• Sieber N., Ristein Jürgen, Ley Lothar:
  Mechanism of reaktive Ion etching of 6H-SiC in CHF3/O2 gas mixtures
  In: Materials Science Forum 264-268 (1998), S. 825
  ISSN: 0255-5476
• Cui Jingbiao, Amtmann K., Ristein Jürgen, Ley Lothar:
  Non contact temperature measurements of diamond by Raman spectroscopy
  In: Journal of Applied Physics 83 (1998), S. 7929
  ISSN: 1089-7550
• Ristein Jürgen, Stein W., Ley Lothar:
  Photoelectron yield spectroscopy on negative electron affinity diamond surfaces: a contactless unipolar transport experiment
  In: Diamond and Related Materials 7 (1998), S. 626
  ISSN: 0925-9635
• Ristein Jürgen, Schäfer J., Ley Lothar:
  Valence band and gap state spectroscopy of amorphous carbon by photoelectron emission techniques
  1st International Specialist Meeting on Amorphous Carbon (Singapore)
  In: Amorphous Carbon:State of the Art, Singapore: 1998

1997

• Miyazaki Seiichi, Nishimura H., Fukuda M, Ley Lothar, Ristein Jürgen:
  Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces
  In: Applied Surface Science 117/118 (1997), S. 32
  ISSN: 0169-4332
• Ristein Jürgen, Graupner Ralf:
  Electronic properties of diamond surfaces
  In: Festkörperprobleme/Advances in Solid State Physics, Braunschweig/Wiesbaden: Vieweg, 1997, S. 77
• Ristein Jürgen, Stein W., Ley Lothar:
  Defect Spectroscopy and Determination of the Electron Diffusion Length in Single Crystal Diamond by Total Photoelectron Yield Spectroscopy
  In: Physical Review Letters 78 (1997), S. 1803-1806
  ISSN: 0031-9007
• Graupner Ralf, Hollering Markus, Ziegler Anja, Ristein Jürgen, Ley Lothar, Stampfl A.:
  Dispersion of surface states on diamond (100) and (111)
  In: Physical Review B 55 (1997), S. 10841
  ISSN: 0163-1829
• Schäfer J, Ristein Jürgen, Ley Lothar:
  Electronic and structural properties of the interface between c-Si (111) and diamond like carbon
  In: Diamond and Related Materials 6 (1997), S. 730
  ISSN: 0925-9635
• Miyazaki Seiichi, Schäfer J., Ristein Jürgen, Ley Lothar:
  Implication of hydrogen-induced boron passivation in wet-chemically cleaned Si(111):H
  In: Applied Surface Science 117/118 (1997), S. 32
  ISSN: 0169-4332
• Schäfer J, Ristein Jürgen, Miyazaki Seiichi, Ley Lothar:
  Interface formation between hydrogen terminated Si (111) and amorphous hydrogenated carbon (a-C:H)
  In: Journal of Vacuum Science & Technology A 15 (1997), S. 408
  ISSN: 0734-2101

1996

• Ley Lothar, Ristein Jürgen, Schäfer J., Miyazaki Seiichi:
  New-surface dopant passivation after wet-chemical preparation of Si (111):H surfaces
  In: Journal of Vacuum Science & Technology B 14 (1996), S. 3008
  ISSN: 1071-1023
• Stöckel R., Janischowsky Klemens, Rohmfeld Stefan, Ristein Jürgen, Hundhausen Martin, Ley Lothar:
  Growth of diamond on silicon during the bias pretreatment in chemically vapour deposition of polycristalline diamond films
  In: Journal of Applied Physics 76 (1996), S. 768
  ISSN: 1089-7550
• Leihkamm K., Wolf Markus, Ristein Jürgen, Ley Lothar:
  Changes of the occupied density of defect states of a-Si:H upon illumination
  In: Physical Review B 53 (1996), S. 4522
  ISSN: 0163-1829
• Stief R., Schäfer J., Ristein Jürgen, Ley Lothar, Beyer Wolfgang Fritz:
  Hydrogen bonding analysis in amorphous hydrogenated carbon by a combination of infrared absorption and thermal effusion experiments
  In: Journal of Non-Crystalline Solids 198-200 (1996), S. 643
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(95)00779-2
• Schäfer J, Ristein Jürgen, Graupner Ralf, Ley Lothar, Stephan U., Frauenheim Thomas, Veerasamy V.S., Amaratunga Gehan A. J., Weiler M., Erhardt H.:
  Photoemission study of amorphous carbon modifications and comparison with calculated densities of states
  In: Physical Review B 53 (1996), S. 7762
  ISSN: 0163-1829
• Miyazaki Seiichi, Schäfer J., Ristein Jürgen, Ley Lothar:
  Surface Fermi level position of hydrogen passivated Si (111) surfaces
  In: Applied Physics Letters 68 (1996), S. 1247
  ISSN: 0003-6951
  DOI: 10.1063/1.115941
• Graupner Ralf, Ristein Jürgen, Ziegler Anja, Hollering Markus, Ley Lothar:
  Surface state dispersions on diamond (100) and (111) surfaces
  In: the Physics of Semiconductors, Singapore: World Scientific, 1996, S. 843
• Schäfer J, Ristein Jürgen, Ley Lothar, Stephan U., Frauenheim Thomas:
  The density of states of ta-C, ta-C:H and a-C:H as determined by x-ray excited photoelectron spectroscopy and molecular dynamics calculation
  In: Journal of Non-Crystalline Solids 198-200 (1996), S. 641
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(95)00780-6

1995

• Stöckel R., Janischowsky Klemens, Rohmfeld Stefan, Ristein Jürgen, Hundhausen Martin, Ley Lothar:
  Diamond growth during the bias pretreatment in microwave CVD of diamond
  In: Diamond and Related Materials 5 (1995), S. 321
  ISSN: 0925-9635
• Ristein Jürgen, Schäfer J., Ley Lothar:
  Effektive correlation energies for defects in a-C:H from a comparison of photoelectron yield and electron spin resonance experiments
  In: Diamond and Related Materials 4 (1995), S. 508
  ISSN: 0925-9635
• Ristein Jürgen, Appelt C, Gertkemper T., Ley Lothar:
  The influence of chemical annealing on the electronic properties of amorphous silicon
  Hydrogenated Amorphous Silicon
  In: Solid State Phenomena, Switzerland: 1995

1994

• Ristein J.:
  Sum rule for quadrature response frequency resolved photoluminescence spectra
  In: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties 70 (1994), S. 963
  ISSN: 1364-2812
• Graupner Ralf, Stöckel R., Janischowsky Klemens, Ristein Jürgen, Hundhausen Martin, Ley Lothar:
  The influence of surface treatment on the electronic structure of CVD diamond films
  In: Diamond and Related Materials 3 (1994), S. 891
  ISSN: 0925-9635
  DOI: 10.1016/0925-9635(94)90294-1
• Graupner Ralf, Ristein Jürgen, Ley Lothar:
  Photoelectron spectroscopy of clean and hydrogen exposed diamond (111) surfaces
  In: Surface Science 320 (1994), S. 201
  ISSN: 0039-6028
  DOI: 10.1016/0039-6028(94)00499-4

1993

• Xu S., Hundhausen Martin, Ristein Jürgen, Yan. B., Ley Lothar:
  Influence of substrate bias on the properties of a-C:H films prepared by plasma CVD
  In: Journal of Non-Crystalline Solids 164-166 (1993), S. 1127
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(93)91197-B
• Stöckel R., Graupner Ralf, Janischowsky Klemens, Xu S., Ristein Jürgen, Hundhausen Martin, Ley Lothar:
  Initial stages in the growth of polycrystalline diamond on silicon
  In: Diamond and Related Materials 2 (1993), S. 1467
  ISSN: 0925-9635
  DOI: 10.1016/0925-9635(93)90014-S
• Plass M.F., Ristein Jürgen, Ley Lothar:
  Electronic and structural properties of the a-Si:H/a-SiNx:H interface
  In: Journal of Non-Crystalline Solids 164-166 (1993), S. 195
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(93)91125-M
• Schäfer J, Ristein Jürgen, Ley Lothar:
  Electronic structure and defect density of states of hydrogenated amorphous carbon (a-C:H) as determined by photoelectron and photoelectron yield spectroscopy
  In: Journal of Non-Crystalline Solids 164-166 (1993), S. 1123
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(93)91196-A
• Schäfer J, Ristein Jürgen, Ley Lothar, Ibach Harald:
  High Sensitivity photoelectron yield spectroscopy with computer-calculated electron optics
  In: Review of Scientific Instruments 64 (1993), S. 653
  ISSN: 0034-6748
  DOI: 10.1063/1.1144192
• Gertkemper Th., Ristein Jürgen, Ley Lothar:
  In-situ characterization of chemical annealing of a-Si:H by photoelectron spectroscopy
  In: Journal of Non-Crystalline Solids 164-166 (1993), S. 123
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(93)90507-T
• Graf Walther, Wolf Markus, Leihkamm K., Ristein Jürgen, Ley Lothar:
  Light-induced transient changes of the occupied density of defect states of a-Si:H
  In: Journal of Non-Crystalline Solids 164-166 (1993), S. 195
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(93)90524-2
• Graf Walther, Leihkamm K., Ristein Jürgen, Ley Lothar:
  Signature of the weak bond-dangling bond conversion process in a-Si:H as seen by total photoelectron yield spectroscopy
  Amorphous Silicon Technology (Pitsburg, 13. April 1993 - 16. April 1993)
  In: MRS Proceedings 1993

1991

• Hautala J., Taylor P.C., Ristein Jürgen:
  Interface states in a-Si:H as probed by optically induced ESR
  Amorphous Silicon Materials and Solar Cells (Stafford, Denver)
  In: AIP Conference Proceedings 1991
• Ristein J.:
  Unification of geminate and distant pair recombination statistics: low temperature photoelectronic properties in a-Si:H
  In: Journal of Non-Crystalline Solids 137&138 (1991), S. 563
  ISSN: 0022-3093
  DOI: 10.1016/S0022-3093(05)80180-2

1990

• Ristein Jürgen, Taylor P.C., Ohlsen W.D., Weiser Gerhard:
  Radiative recombination center in As2Se3 as studied by optically detected magnetic resonance
  In: Physical Review B 42 (1990), S. 11845
  ISSN: 0163-1829
  DOI: 10.1103/PhysRevB.42.11845

1989

• Ristein Jürgen, Hautala J., Taylor P.C.:
  Defect spectroscopy in a-Si:H using infrared excited luminescence and electron spin resonance
  In: Journal of Non-Crystalline Solids 114 (1989), S. 444
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(89)90612-1
• Ristein Jürgen, Hautala J., Taylor P.C.:
  Excitation-energy dependence of optically induced ESRin a-Si:H
  In: Physical Review B 40 (1989), S. 88
  ISSN: 2469-9950
• Ristein Jürgen, Hooper Brett, Gu S., Taylor P.C.:
  Excitation spectroscopy of photoluminescence in a-Si:H
  In: Solar Cells 27 (1989), S. 403
  ISSN: 0379-6787
  DOI: 10.1016/0379-6787(89)90049-5
• Ristein Jürgen, Taylor P.C., Ohlsen W.D., Weiser Gerhard:
  Optically detected magnetic resonance of the intrinsic luminescence in As2Se3
  In: Journal of Non-Crystalline Solids 114 (1989), S. 91
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(89)90078-1

1988

• Ristein Jürgen, Weiser Gerhard:
  Microscopic structure of the radiative centre in As2Se3 crystals
  In: Solid State Communications 66 (1988), S. 361
  ISSN: 0038-1098
  DOI: 10.1016/0038-1098(88)90857-5
• Ristein Jürgen, Finger F., Fuchs W., Liedtke S.:
  Optically detected magnetic resonance (OMDR) in a-Si1-xGex:H-alloys
  In: Solid State Communications 67 (1988), S. 211
  ISSN: 0038-1098

1987

• Weiser Gerhard, Ristein Jürgen:
  New insight into recombination and thermalization in As2Se3
  In: Journal of Non-Crystalline Solids 97&98 (1987), S. 1131
  ISSN: 0022-3093
  DOI: 10.1016/0022-3093(87)90271-7
• Ristein Jürgen, Weiser Gerhard:
  Thermalization of excited carriers through band states studied by photoluminescence in As2Se3 single crystals
  In: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties 56 (1987), S. 51
  ISSN: 1364-2812

1986

• Ristein Jürgen, Weiser Gerhard:
  Quenching by electric fields of the luminescence of As2Se3 single crystals
  In: Solid State Communications 57 (1986), S. 639
  ISSN: 0038-1098
  DOI: 10.1016/0038-1098(86)90340-6
• Ristein Jürgen, Weiser Gerhard:
  Recombination of geminate pairs in As2Se3 single crystals
  In: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties 54 (1986), S. 533
  ISSN: 1364-2812

1985

• Ristein Jürgen, Weiser Gerhard:
  Influence of doping on the optical properties and on the covalent bonds in plasma deposited amorphous silicon
  In: Solar Energy Materials 12 (1985), S. 221
  ISSN: 0165-1633
  DOI: 10.1016/0165-1633(85)90060-7